Characteristic time of transition from write error to retention error in voltage-controlled magnetoresistive random-access memory

Voltage controlled magnetoresistive random access memory (VC MRAM) is a promising candidate for future low-power high-density memory. The main causes of bit errors in VC MRAM are write error and retention error. As the size cell decreases, data time which transition from write-error-dominant region to retention-error-dominant at certain operating time. Here we introduce characteristic analyze how depends on effective anisotropy constant, $K_{0}$. approximately expressed as $t_{\rm c} = 2\, w\, \tau$, where $w$ rate, $\tau$ relaxation derived by Kalmkov [J. Appl. Phys. 96, (2004) 1138-1145]. We show that large $K_{0}$, c}$ increases with increase $K_{0}$ similar $\tau$. key parameter designing variety applications such machine learning artificial intelligence.